Characterization of CuInTe2 thin films prepared by pulsed laser deposition

In this paper initial results are presented for the growth and characterization of CuInTe2 thin films prepared by pulsed loser deposition (PLD) using Nd:YAG laser and XeCl excimer laser. The films were analyzed using X-ray diffraction XRD), energy dispersive X-ray analysis (EDAX) and Rutherford back scattering (RBS) measurements. The composition of the target material was largely maintained in the films. This suggests that PLD could be used as a technique for the fabrication of ternary semiconductor films. Electrical measurements indicated p-type conductivity with surface resistivity values in the range of 10(-1)-10(-2) Omega cm. The films had a high optical absorption of about 104 cm(-1) and a band gap of 0.96 eV. (C) 1998 Elsevier Science B.V.