CHALCOPYRITE CUGAXIN1-XSE2 THIN-FILMS PRODUCED BY LASER-ASSISTED EVAPORATION

Thin films of CuGaIn1-xSe2 were produced by laser-assisted evaporation. From X-ray diffraction analyses, these films have chalcopyrite structure and the lattice parameters were estimated. The optical absorption coefficient of the CuGaxIn1-xSe2 films were determined from the measured transmittance and reflectance in the wavelength range 0.4-2.0 mum. Hot probe analyses indicate that these thin films have p-type conduction. The Van der Pauw measurements show that the rasistivity increases with the decrease of indium content.