CONTACT AND INTERCONNECT FORMATION ON COMPOUND SEMICONDUCTOR-DEVICES BY IONIZED-CLUSTER BEAM DEPOSITION

被引：13

作者：

ISHIDA, T ^{[1
]}

WAKO, S ^{[1
]}

USHIO, S ^{[1
]}

机构：

[1] OKI ELECT IND CO LTD,RES LAB,TOKYO,JAPAN

来源：

THIN SOLID FILMS | 1976年 / 39卷 / DEC期

关键词：

D O I：

10.1016/0040-6090(76)90640-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：227 / 235

页数：9

共 8 条

[1]

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LOGAN, RA ;

NELSON, DF .

PHYSICAL REVIEW, 1966, 149 (02) :580-+

[3] OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE [J].

HARRIS, JS ;

NANNICHI, Y ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4575-&

[4] VARIATION OF CONTACT RESISTANCE OF METAL-GAAS CONTACTS WITH IMPURITY CONCENTRATION AND ITS DEVICE IMPLICATION [J].

KLOHN, KL ;

WANDINGE.L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) :507-&

[5]

MATTOX DM, 1973, SLA740619 SAND LAB D

[6]

MURAYAMA Y, 1974, 6TH P INT VAC C, P459

[7] IONIZED-CLUSTER BEAM DEPOSITION [J].

TAKAGI, T ;

YAMADA, I ;

SASAKI, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1128-1134

[8]

WHITE GW, 1973, P SOC AUTOMOTIVE ENG

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