Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high temperature forming gas annealing

被引：52

作者：

Nieh, RE ^{[1
]}

Kang, CS ^{[1
]}

Cho, HJ ^{[1
]}

Onishi, K ^{[1
]}

Choi, R ^{[1
]}

Krishnan, S ^{[1
]}

Han, JH ^{[1
]}

Kim, YH ^{[1
]}

Akbar, MS ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 02期

关键词：

gate dielectric; high-k; mobility; zirconium oxide; zirconium oxynitride (Zr-oxynitride);

D O I：

10.1109/TED.2002.808531

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical, material, and reliability characteristics of zirconium oxynitride,(Zr-oxynitride) gate dielectrics were evaluated. The nitrogen (similar to1.7%) in Zr-oxynitride was primarily located at the Zr-oxynitride/Si interface and helped to preserve the composition of the nitrogen-doped Zr-silicate interfacial layer (IL) during annealing as compared to the ZrO2 IL-resulting in improved thermal stability of the Zr-oxynitride. In addition, the Zr-oxynitride demonstrated a higher crystallization temperature (similar to600 degreesC) as compared to ZrO2 (similar to400 degreesC). Reliability characterization was performed after TaN-gated nMOSFET fabrication of Zr-oxynitride and ZrO2 devices with equivalent oxide thickness (EOTs) of 10.3 Angstrom and 13.8 Angstrom, respectively. Time-zero dielectric breakdown and time-dependent dielectric breakdown (TDDB) characteristics revealed higher dielectric strength and effective breakdown field for the Zr-oxynitride. High-temperature forming gas (HTFG) annealing on TaN/Zr-oxynitride nMOSFETs with an EOT of 11.6 Angstrom demonstrated reduced D-it, which resulted in, reduced swing (69 mV/decade), reduced off-state leakage current, higher transconductance, and-higher mobility. The peak mobility was increased by almost fourfold from 97 cm V(.)s to 383 cm(2) V(.)s after 600 degreesC HTFG annealing.

引用

页码：333 / 340

页数：8

共 25 条

[1] Oxygen exchange and transport in thin zirconia films on Si(100) [J].