Towards graphene nanoribbon-based electronics

被引：52

作者：

Huang, Bing ^{[1
]}

Yan, Qi-min ^{[1
]}

Li, Zuan-yi ^{[1
]}

Duan, Wen-hui ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

FRONTIERS OF PHYSICS IN CHINA | 2009年 / 4卷 / 03期

基金：

中国国家自然科学基金;

关键词：

graphene nanoribbons; transport; edge disorder; electronic devices; spin polarization; FIELD-EFFECT TRANSISTORS; MASSLESS DIRAC FERMIONS; FEW-LAYER GRAPHENE; HALF-METALLICITY; EPITAXIAL GRAPHENE; BILAYER GRAPHENE; CARBON NANOTUBES; GAS MOLECULES; BERRYS PHASE; GRAPHITE;

D O I：

10.1007/s11467-009-0029-3

中图分类号：

O4 [物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

The successful fabrication of single layer graphene has greatly stimulated the progress of the research on graphene. In this article, focusing on the basic electronic and transport properties of graphene nanoribbons (GNRs), we review the recent progress of experimental fabrication of GNRs, the theoretical and experimental investigations of physical properties, and device applications of GNRs. We also briefly discuss the research efforts on the spin polarization of GNRs in relation to the edge states.

引用

页码：269 / 279

页数：11

共 105 条

[1]

Quantized transport in graphene p-n junctions in a magnetic field [J].

Abanin, D. A. ;

Levitov, L. S. .

SCIENCE, 2007, 317 (5838) :641-643

[2]

Theory of the valley-valve effect in graphene nanoribbons [J].

Akhmerov, A. R. ;

Bardarson, J. H. ;

Rycerz, A. ;

Beenakker, C. W. J. .

PHYSICAL REVIEW B, 2008, 77 (20)

[3]

Building blocks for integrated graphene circuits [J].

Areshkin, Denis A. ;

White, Carter T. .

NANO LETTERS, 2007, 7 (11) :3253-3259

[4]

Ballistic transport in graphene nanostrips in the presence of disorder: Importance of edge effects [J].

Areshkin, Denis A. ;

Gunlycke, Daniel ;

White, Carter T. .

NANO LETTERS, 2007, 7 (01) :204-210

[5]

Molecular electronics with carbon nanotubes [J].

Avouris, P .

ACCOUNTS OF CHEMICAL RESEARCH, 2002, 35 (12) :1026-1034

[6]

Electronic structure and stability of semiconducting graphene nanoribbons [J].

Barone, Veronica ;

Hod, Oded ;

Scuseria, Gustavo E. .

NANO LETTERS, 2006, 6 (12) :2748-2754

[7]

Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors [J].

Basu, D. ;

Gilbert, M. J. ;

Banerjee, S. K. ;

MacDonald, A. H. .

APPLIED PHYSICS LETTERS, 2008, 92 (04)

[8]

Colloquium: Andreev reflection and Klein tunneling in graphene [J].

Beenakker, C. W. J. .

REVIEWS OF MODERN PHYSICS, 2008, 80 (04) :1337-1354

[9]

Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics [J].

Berger, C ;

Song, ZM ;

Li, TB ;

Li, XB ;

Ogbazghi, AY ;

Feng, R ;

Dai, ZT ;

Marchenkov, AN ;

Conrad, EH ;

First, PN ;

de Heer, WA .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (52) :19912-19916

[10]

Electronic confinement and coherence in patterned epitaxial graphene [J].

Berger, Claire ;

Song, Zhimin ;

Li, Xuebin ;

Wu, Xiaosong ;

Brown, Nate ;

Naud, Cecile ;

Mayou, Didier ;

Li, Tianbo ;

Hass, Joanna ;

Marchenkov, Atexei N. ;

Conrad, Edward H. ;

First, Phillip N. ;

de Heer, Wait A. .

SCIENCE, 2006, 312 (5777) :1191-1196

← 1 2 3 4 5 6 7 8 9 10 →