On the Origin of Increased Phonon Scattering in Nanostructured PbTe Based Thermoelectric Materials

被引:215
作者
He, Jiaqing [1 ,2 ]
Sootsman, Joseph R. [2 ]
Girard, Steven N. [2 ]
Zheng, Jin-Cheng [3 ,4 ,5 ]
Wen, Jianguo [6 ]
Zhu, Yimei [7 ]
Kanatzidis, Mercouri G. [2 ,8 ]
Dravid, Vinayak P. [1 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[2] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[3] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China
[4] Xiamen Univ, Inst Theoret Phys & Astrophys, Xiamen 361005, Peoples R China
[5] Xiamen Univ, Fujian Key Lab Semicond Mat & Applicat, Xiamen 361005, Peoples R China
[6] Univ Illinois, Frederick Seitz Mat Res Lab, Ctr Microanal Mat, Urbana, IL 61801 USA
[7] Brookhaven Natl Lab, Dept Condensed Matter & Mat Sci, Upton, NY 11973 USA
[8] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
关键词
LATTICE THERMAL-CONDUCTIVITY; HIGH-TEMPERATURE; PERFORMANCE; SILICON; SOLIDS; FIGURE; STRAIN; POWER; HEAT;
D O I
10.1021/ja1010948
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We have investigated the possible mechanisms of phonon scattering by nanostructures and defects in PbTe-X (X = 2% Sb, Bi, or Pb) thermoelectric materials systems. We find that among these three compositions, PbTe-2% Sb has the lowest lattice thermal conductivity and exhibits a larger strain and notably more misfit dislocations at the precipitate/PbTe interfaces than the other two compositions. In the PbTe-Bi 2% sample, we infer some weaker phonon scattering BiTe precipitates, in addition to the abundant Bi nanostructures. In the PbTe-Pb 2% sample, we also find that pure Pb nanoparticles exhibit stronger phonon scattering than nanostructures with Te vacancies. Within the accepted error range, the theoretical calculations of the lattice thermal conductivity in the three systems are in close agreement with the experimental measurements, highlighting the important role of misfit dislocations, nanoscale particles, and associated interfacial elastic strain play in phonon scattering. We further propose that such particle-induced local elastic perturbations interfere with the phonon propagation pathway, thereby contributing to further reduction in lattice thermal conductivity, and consequently can enhance the overall thermoelectric figure of merit.
引用
收藏
页码:8669 / 8675
页数:7
相关论文
共 47 条
[1]   Nanostructuring and high thermoelectric efficiency in p-type Ag(Pb1-ySny)mSbTe2+m [J].
Androulakis, John ;
Hsu, Kuei Fang ;
Pcionek, Robert ;
Kong, Huijun ;
Uher, Ctirad ;
DAngelo, Jonathan J. ;
Downey, Adam ;
Hogan, Tim ;
Kanatzidis, Mercouri G. .
ADVANCED MATERIALS, 2006, 18 (09) :1170-+
[2]   Spinodal decomposition and nucleation and growth as a means to bulk nanostructured thermoelectrics:: Enhanced performance in Pb1-xSnxTe-PbS [J].
Androulakis, John ;
Lin, Chia-Her ;
Kong, Hun-Jin ;
Uher, Ctirad ;
Wu, Chun-I ;
Hogan, Timothy ;
Cook, Bruce A. ;
Caillat, Thierry ;
Paraskevopoulos, Konstantinos M. ;
Kanatzidis, Mercouri G. .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2007, 129 (31) :9780-9788
[3]   Cooling, heating, generating power, and recovering waste heat with thermoelectric systems [J].
Bell, Lon E. .
SCIENCE, 2008, 321 (5895) :1457-1461
[4]   Effect of strain on the thermal conductivity of solids [J].
Bhowmick, Somnath ;
Shenoy, Vijay B. .
JOURNAL OF CHEMICAL PHYSICS, 2006, 125 (16)
[5]   Silicon nanowires as efficient thermoelectric materials [J].
Boukai, Akram I. ;
Bunimovich, Yuri ;
Tahir-Kheli, Jamil ;
Yu, Jen-Kan ;
Goddard, William A., III ;
Heath, James R. .
NATURE, 2008, 451 (7175) :168-171
[6]   EFFECT OF POINT IMPERFECTIONS ON LATTICE THERMAL CONDUCTIVITY [J].
CALLAWAY, J ;
VONBAEYER, HC .
PHYSICAL REVIEW, 1960, 120 (04) :1149-1154
[7]   THEORY OF THERMAL CONDUCTIVITY OF SOLIDS AT LOW TEMPERATURES [J].
CARRUTHERS, P .
REVIEWS OF MODERN PHYSICS, 1961, 33 (01) :92-138
[8]  
Chen G, 2005, THERM COND, V27, P263
[9]   Phonon engineering in nanostructures for solid-state energy conversion [J].
Chen, G ;
Zeng, T ;
Borca-Tasciuc, T ;
Song, D .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2000, 292 (02) :155-161
[10]   CsBi4Te6:: A high-performance thermoelectric material for low-temperature applications [J].
Chung, DY ;
Hogan, T ;
Brazis, P ;
Rocci-Lane, M ;
Kannewurf, C ;
Bastea, M ;
Uher, C ;
Kanatzidis, MG .
SCIENCE, 2000, 287 (5455) :1024-1027