Reflection z-scan measurements of opaque semiconductor thin films

被引：17

作者：

Ganeev, RA ^{[1
]}

Ryasnyansky, AI

机构：

[1] NPO Akadempribor, Tashkent 700125, Uzbekistan

[2] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

[3] Univ Paris 06, CNRS, Inst Nanosci Paris, F-75015 Paris, France

[4] Samarkand State Univ, Samarkand 703004, Uzbekistan

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2005年 / 202卷 / 01期

关键词：

D O I：

10.1002/pssa.200406896

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the nonlinear refraction of semiconductor thin films (3As(2)S(3)/As2Se3, and CdS) at the wavelength of 532 nm using the reflection z-scan technique (RZ-scan). The values of nonlinear refractive indices gamma of 3As(2)S(3)/As2Se3 and CdS were calculated to be 5 x 10(-10) cm(2) W-1 and -5.2 x 10(-11) cm(2) W-1. The comparison of RZ-scans and transmission z-scans was carried out for CdS film. The sign of nonlinear refraction of these chalcogenides was discussed in the framework of Kramers-Kronig transformations. (C) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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页码：120 / 125

页数：6

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