Structural properties of the multilayer graphene/4H-SiC(000(1) overbar) system as determined by surface x-ray diffraction

被引：157

作者：

Hass, J. ^{[1
]}

Feng, R.

Millan-Otoya, J. E.

Li, X.

Sprinkle, M.

First, P. N.

de Heer, W. A.

Conrad, E. H.

Berger, C.

机构：

[1] Georgia Inst Technol, Atlanta, GA 30332 USA

[2] Inst Neel, F-38042 Grenoble, France

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 21期

关键词：

D O I：

10.1103/PhysRevB.75.214109

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a structural analysis of the multilayer graphene/4HSiC(0001) system using surface x-ray reflectivity. We show that graphene films grown on the C-terminated (0001) surface have a graphene-substrate bond length that is very short (1.62 angstrom). The measured distance rules out a weak van der Waals interaction to the substrate and instead indicates a strong bond between the first graphene layer and the bulk as predicted by ab initio calculations. The measurements also indicate that multilayer graphene grows in a near turbostratic mode on this surface. This result may explain the lack of a broken graphene symmetry inferred from conduction measurements on this system [C. Berger et al., Science 312, 1191 (2006)].

引用

页数：8

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