Structural properties of the multilayer graphene/4H-SiC(000(1) overbar) system as determined by surface x-ray diffraction

被引:157
作者
Hass, J. [1 ]
Feng, R.
Millan-Otoya, J. E.
Li, X.
Sprinkle, M.
First, P. N.
de Heer, W. A.
Conrad, E. H.
Berger, C.
机构
[1] Georgia Inst Technol, Atlanta, GA 30332 USA
[2] Inst Neel, F-38042 Grenoble, France
来源
PHYSICAL REVIEW B | 2007年 / 75卷 / 21期
关键词
D O I
10.1103/PhysRevB.75.214109
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a structural analysis of the multilayer graphene/4HSiC(0001) system using surface x-ray reflectivity. We show that graphene films grown on the C-terminated (0001) surface have a graphene-substrate bond length that is very short (1.62 angstrom). The measured distance rules out a weak van der Waals interaction to the substrate and instead indicates a strong bond between the first graphene layer and the bulk as predicted by ab initio calculations. The measurements also indicate that multilayer graphene grows in a near turbostratic mode on this surface. This result may explain the lack of a broken graphene symmetry inferred from conduction measurements on this system [C. Berger et al., Science 312, 1191 (2006)].
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页数:8
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