Self-aligned silicon quantum wires on Ag(110)

被引:126
作者
Leandri, C
Le Lay, G
Aufray, B
Girardeaux, C
Avila, J
Dávila, ME
Asensio, MC
Ottaviani, C
Cricenti, A
机构
[1] CNRS, CRMCN, F-13288 Marseille 9, France
[2] L2MP, F-13397 Marseille 20, France
[3] CSIC, Inst Ciencia Mat Madrid, Madrid 28049, Spain
[4] Univ Paris 11, LURE, F-91898 Orsay, France
[5] CNR, Inst Struttura Mat, I-00133 Rome, Italy
关键词
silver; silicon; self-assembly; nanowires; scanning tunneling microscropy; photoelectron spectroscopy;
D O I
10.1016/j.susc.2004.10.052
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Upon deposition of silicon onto the (110) surface of a silver crystal we have grown massively parallel one-dimensional Si nanowires. They are imaged in scanning tunnelling microscopy as straight, high aspect ratio, nanostructures, all with the same characteristic width of 16Angstrom, perfectly aligned along the atomic troughs of the bare surface. Low energy electron diffraction confirms the massively. parallel assembly of these self-organized nanowires. Photoemission reveals striking quantized states dispersing only along the length of the nanowires, and extremely sharp, two-components, Si 2p core levels. This demonstrates that in the large ensemble each individual nanowire is a well-defined quantum object comprising only two distinct silicon atomic environments. We suggest that this self-assembled array of highly perfect Si nanowires provides a simple, atomically precise, novel template that may impact a wide range of applications. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:L9 / L15
页数:7
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