Oxidation of III-V semiconductors

被引：3

作者：

Graham, M. J. ^{[1
]}

Moisa, S.

Sproule, G. I.

Wu, X.

Landheer, D.

SpringThorpe, A. J.

Barrios, P.

Kleber, S.

Schmuki, P.

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[2] Univ Erlangen Nurnberg, D-91058 Erlangen, Germany

来源：

CORROSION SCIENCE | 2007年 / 49卷 / 01期

关键词：

electronic materials; AES; XPS; TEM; oxidation films;

D O I：

10.1016/j.corsci.2006.05.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper focuses on the characterization of anodic films (formed in aqueous electrolytes) and thermal oxides (formed at similar to 500 degrees C) on GaAs, InP, AlGaAs, InAlAs, InAlP and heterostructures for GaAs- and InP-based devices. Emphasis is placed on At-containing oxides, particularly on InAlP which possess good insulating properties. The composition and nature of the oxides have been determined by Auger electron spectroscopy, X-ray photoelectron spectroscopy, O-16/O-18 secondary ion mass spectrometry, Rutherford backscattering spectroscopy, scanning and transmission electron microscopy. Electrical measurements performed on metal-insulator-semiconductor (MIS) structures indicate that the Al-containing oxides have good electrical properties making the films potentially useful for some device applications. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：31 / 41

页数：11

共 24 条

[1]

BARRIOS PJ, 2001, 43 EL MAT C NOTR DAM

[2] Electrical properties of InAlP native oxides for metal-oxide-semiconductor device applications [J].

Cao, Y ;

Zhang, J ;

Li, X ;

Kosel, TH ;

Fay, P ;

Hall, DC ;

Zhang, XB ;

Dupuis, RD ;

Jasinski, JB ;

Liliental-Weber, Z .

APPLIED PHYSICS LETTERS, 2005, 86 (06) :1-3

[3] LONG-WAVELENGTH (LAMBDA-SIMILAR-TO 1.5-MU-M) NATIVE-OXIDE-DEFINED INALAS-INP-INGAASP QUANTUM-WELL HETEROSTRUCTURE LASER-DIODES [J].

CARACCI, SJ ;

KRAMES, MR ;

HOLONYAK, N ;

LUDOWISE, MJ ;

FISCHERCOLBRIE, A .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (05) :2706-2708

[4] Composition and growth of thin anodic oxides formed on InP (100) [J].

Djenizian, T ;

Sproule, GI ;

Moisa, S ;

Landheer, D ;

Wu, X ;

Santinacci, L ;

Schmuki, P ;

Graham, MJ .

ELECTROCHIMICA ACTA, 2002, 47 (17) :2733-2740

[5] Formation of anodic oxides on Al0.2Ga0.8As and Al0.8Ga0.2As in tungstate electrolytes [J].

Echeverria, F ;

Skeldon, P ;

Thompson, GE ;

Graham, MJ ;

Habazaki, H ;

Shimizu, K .

CORROSION SCIENCE, 2000, 42 (10) :1839-1851

[6] XPS INVESTIGATION OF ANODIC OXIDES GROWN ON P-TYPE INP [J].

FAUR, M ;

JAYNE, DT ;

GORADIA, M ;

GORADIA, C .

SURFACE AND INTERFACE ANALYSIS, 1990, 15 (11) :641-650

[7] Lateral oxidation of InAlAs in InP-based heterostructures for long wavelength vertical cavity surface emitting laser applications [J].

Gebretsadik, H ;

Kamath, K ;

Zhou, WD ;

Bhattacharya, P ;

Caneau, C ;

Bhat, R .

APPLIED PHYSICS LETTERS, 1998, 72 (02) :135-137

[8]

Graham MJ, 2000, MATER HIGH TEMP, V17, P1

[9]

GRAHAM MJ, 2003, P 5 INT C MICR OX LI, P277

[10]

GRAHAM MJ, 2003, P INT S CORR SCI 21

← 1 2 3 →