Si/Al2O3/ZnO:Al capacitor arrays formed in electrochemically etched porous Si by atomic layer deposition

被引：32

作者：

Kemell, Marianna

Ritala, Mikko

Leskela, Markku

Ossei-Wusu, Emmanuel

Carstensen, Juergen

Foell, Helmut

机构：

[1] Univ Helsinki, Dept Chem, Inorgan Chem Lab, FI-00014 Helsinki, Finland

[2] Univ Kiel, Fac Engn, D-24143 Kiel, Germany

来源：

MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 02期

基金：

芬兰科学院;

关键词：

macroporous silicon; electrochemical etching; atomic layer deposition; thin films; high aspect ratio capacitor;

D O I：

10.1016/j.mee.2006.10.085

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High surface area Si/Al2O3/ZnO:Al capacitors were formed in electrochemically etched porous silicon. The Al2O3 dielectric and the ZnO:Al top electrode were deposited by atomic layer deposition in high aspect ratio porous Si. A single capacitor with a typical area of about 1 mm(2) consisted of about 10(5) pores. Effective capacitance densities were between 2.0 and 2.5 mu F/cm(2), i.e., approximately 30 times higher than for a planar capacitor prepared under identical conditions, illustrating the effect of the enhanced surface area in the porous structure. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：313 / 318

页数：6

共 24 条

[1] Atomic layer deposition of noble metals:: Exploration of the low limit of the deposition temperature [J].