Variation of lattice dimensions in epitaxial SnS films on MgO(001)

被引：38

作者：

Nozaki, H ^{[1
]}

Onoda, M ^{[1
]}

Sekita, M ^{[1
]}

Kosuda, K ^{[1
]}

Wada, T ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 2005年 / 178卷 / 01期

关键词：

tin sulfide; epitaxial films; molecular beam epitaxy; X-ray diffraction; magnesium oxide; lattice parameters; SEM image; segregation; band gap; refractive index;

D O I：

10.1016/j.jssc.2004.11.031

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Epitaxial and polycrystalline SnS films were prepared on MgO(001) and glass substrates using molecular beam epitaxy. The films were characterized by X-ray diffraction method. The orientations of epitaxial films were (010)[100]Sns\\(001)[100]MgO or (010)[001]SnS\\(001)[100]MgO. Lattice parameters of the polycrystalline film closely resembled those of bulk SnS at room temperature. However, the lattice parameters of epitaxial films varied widely and were very different from those of bulk SnS at room temperature. Considering the lattice dimensions and a/c ratio, the films roughly correspond to bulk SnS at elevated temperatures from 371 to 666K. SEM images of the films showed needle- or circular-like SnS crystallites segregated from the epitaxial films. Respective energies of indirect band gaps of the films and refractive index of the polycrystalline film were estimated using results of optical transmission experiments. (C) 2004 Elsevier Inc. All rights reserved.

引用

页码：245 / 252

页数：8

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