Recent advances in SiC power devices

被引：45

作者：

Cooper, JA ^{[1
]}

Melloch, MR ^{[1
]}

Woodall, JM ^{[1
]}

Spitz, J ^{[1
]}

Schoen, KJ ^{[1
]}

Henning, JP ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

Schottky rectifiers; pinch rectifiers; JBS rectifiers; thyristors; GTO's; UMOS transistors; DMOS transistors; LDMOS transistors;

D O I：

10.4028/www.scientific.net/MSF.264-268.895

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon carbide (SiC) is a superior material for power devices because of its high breakdown field, good thermal conductivity, and excellent thermal stability. Moreover, SiC possesses a high quality native oxide suitable for fabricating MOS-based power devices. Although a number of processing issues still need to be resolved., development of prototype power devices has proceeded rapidly. The greatest progress has taken place in Schottky rectifiers, thyristors, and power MOSFETs.

引用

页码：895 / 900

页数：6

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