Surface segregation at the aluminum interface of poly(3-hexylthiophene)/fullerene solar cells

被引：110

作者：

Orimo, Akiko ^{[1
]}

Masuda, Kohji ^{[1
]}

Honda, Satoshi ^{[1
]}

Benten, Hiroaki ^{[1
]}

Ito, Shinzaburo ^{[1
]}

Ohkita, Hideo ^{[1
,2
]}

Tsuji, Hiroshi ^{[3
]}

机构：

[1] Kyoto Univ, Grad Sch Engn, Dept Polymer Chem, Kyoto 6158510, Japan

[2] Japan Sci & Technol Agcy JST, PRESTO, Kawaguchi, Saitama 3320012, Japan

[3] Kyoto Univ, Grad Sch Engn, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 04期

关键词：

aluminium; annealing; current density; fullerenes; polymer blends; solar cells; surface segregation; X-ray photoelectron spectra; POLYMER; BLENDS; MORPHOLOGY; FILMS;

D O I：

10.1063/1.3294290

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of thermal annealing before and after Al deposition on poly(3-hexylthiophene) (P3HT)/[6,6]-phenyl-C(61) butyric acid methyl ester (PCBM) blend solar cells were investigated by current density-voltage measurements and x-ray photoelectron spectroscopy (XPS). Compared to the preannealed device, the postannealed device exhibited enhanced open-circuit voltage (V(OC)), which is ascribed to the decrease in the reverse saturation current density J(0). The XPS measurements demonstrated that P3HT is dominant at the Al interface in the preannealed device while PCBM is instead dominant in the postannealed device. This surface-segregated PCBM formed in the postannealed device can serve as a hole-blocking layer at the Al interface to reduce J(0), and therefore improve V(OC).

引用

页数：3

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