Effects of barrier-metal schemes of tungsten plugs and blanket film deposition

被引:5
作者
Chang, HL [1 ]
Jeng, PR [1 ]
机构
[1] UTEK Semicond Corp Ltd, Hsinchu 300, Taiwan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 08期
关键词
PVD TiN; CVD TiN; plasma; W plug; RTP;
D O I
10.1143/JJAP.39.4738
中图分类号
O59 [应用物理学];
学科分类号
摘要
This work investigates the effects of various contact integration schemes on tungsten (W) plug formation. The deposition rate, surface morphology, sheet resistance and reflectivity of W deposited on various substrates are also characterized. Experimental results indicate that the titanium nitride (TiN) film which does not undergo post-rapid-thermal-processing (RTP) treatment has a higher W deposition rate than TiN film which under goes the post-RTP treatment. The W plug formed on chemical vapor deposition (CVD) TiN has easily found voids, which result in high contact resistance. To reveal the relationship of CVD TiN process conditions and W plug loss, process variables including film thickness, plasma ambient, in situ plasma treatment periods and cycles are tested. According to these results, plasma ambient has a strong influence on W plug loss during the etch-back process. In addition, the electrical characteristics of various contact integration schemes are examined in terms of both n(+) and p(+) contact resistance. This work also proposes a superior contact integration scheme to achieve low contact resistance and high production efficiency.
引用
收藏
页码:4738 / 4743
页数:6
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