Characterization of indium tin oxide film and practical ITO film by electron microscopy

被引：24

作者：

Nakao, T

Nakada, T

Nakayama, Y

Miyatani, K

Kimura, Y

Saito, Y

Kaito, C ^{[1
]}

机构：

[1] Ritsumeikan Univ, Dept Phys, Shiga 5258577, Japan

[2] Kyoto Inst Technol, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 6068585, Japan

来源：

THIN SOLID FILMS | 2000年 / 370卷 / 1-2期

关键词：

electron microscopy; indium oxide; solar cells; transmission electron microscopy;

D O I：

10.1016/S0040-6090(00)00951-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to clarify the structure of indium oxide him containing tin and tin oxides, various In2O3 based films prepared by vacuum evaporation were studied using high-resolution electron microscope (HREM). Indium tin oxide (ITO) film was composed of In2O3 and SnO. SnO crystal also contained (110) or (101) crystallographic shear (CS) structures that indicate excess amounts of tin. The CS structure was also found in a commercial ITO film having the resistivity of 2 x 10(-4) Omega cm. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：155 / 162

页数：8

共 8 条

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