Studies of metallic species and oxygen incorporation during sputter-deposition of SrBi2Ta2O9 films, using mass spectroscopy of recoiled ions

被引:13
作者
Im, J
Krauss, AR
Dhote, AM
Gruen, DM
Auciello, O
Ramesh, R
Chang, RPH
机构
[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
[2] Argonne Natl Lab, Div Chem, Argonne, IL 60439 USA
[3] Univ Maryland, Dept Mat & Nucl Engn, College Pk, MD 20742 USA
[4] Northwestern Univ, Dept Mat Sci, Evanston, IL 60208 USA
关键词
D O I
10.1063/1.121409
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have recently developed a mass spectroscopy of recoiled ions technique which is suitable for monolayer-specific surface analysis of thin films during growth. We present initial results using this technique to study the effect of different bottom electrode layers on metallic species and oxygen incorporation in the early stages of SrBi2Ta2O3 (SBT) film growth via ion beam-sputter deposition. The work discussed here has been focused on studying the incorporation of Sr, Bi, and Ta during growth of SET on Pt/Ti/SiO2/Si, Pt/MgO, Ti, and Si substrates. We found that the incorporation of Bi in sputter-deposited SET films depends critically on the bottom electrode surface composition and the growth temperature. (C) 1998 American Institute of Physics. [S0003-6951(98)00920-6].
引用
收藏
页码:2529 / 2531
页数:3
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