Influence of Ti-content in the bottom electrodes on the ferroelectric properties of SrBi2Ta2O9 (SBT)

被引:28
作者
Schindler, G [1 ]
Hartner, W [1 ]
Joshi, V [1 ]
Solayappan, N [1 ]
Derbenwick, G [1 ]
Mazure, C [1 ]
机构
[1] SYMETRIX CORP,COLORADO SPRINGS,CO 80918
关键词
ferroelectric thin films; SrBi2Ta2O9; SBT; Ti/Pt electrodes; electrode anneals;
D O I
10.1080/10584589708013016
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Stress behavior, results of AES analysis and electrical properties of SBT in dependence of electrode structure and annealing conditions are discussed. Evidence for degradation of the electrical properties of SBT due to diffusion of Ti is presented.
引用
收藏
页码:421 / 432
页数:12
相关论文
共 4 条
  • [1] BRUCHHAUS R, 1992, MATER RES SOC S P, V243, P123
  • [2] Microstructural characterization of Pt/Ti and RuO2 electrodes on SiO2/Si annealed in the oxygen ambient
    Lee, JS
    Kwon, HJ
    Jeong, YW
    Kim, HH
    Park, KH
    Kim, CY
    [J]. FERROELECTRIC THIN FILMS V, 1996, 433 : 175 - 180
  • [3] In-situ sputter deposition of PT and PZT films on platinum and RuO2 electrodes
    Maeder, T
    Muralt, P
    Sagalowicz, L
    Setter, N
    [J]. MICROELECTRONIC ENGINEERING, 1995, 29 (1-4) : 177 - 180
  • [4] INVESTIGATION OF PT/TI BILAYER METALLIZATION ON SILICON FOR FERROELECTRIC THIN-FILM INTEGRATION
    SREENIVAS, K
    REANEY, I
    MAEDER, T
    SETTER, N
    JAGADISH, C
    ELLIMAN, RG
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) : 232 - 239