Influence of Ti-content in the bottom electrodes on the ferroelectric properties of SrBi2Ta2O9 (SBT)

被引：28

作者：

Schindler, G ^{[1
]}

Hartner, W ^{[1
]}

Joshi, V ^{[1
]}

Solayappan, N ^{[1
]}

Derbenwick, G ^{[1
]}

Mazure, C ^{[1
]}

机构：

[1] SYMETRIX CORP,COLORADO SPRINGS,CO 80918

来源：

INTEGRATED FERROELECTRICS | 1997年 / 17卷 / 1-4期

关键词：

ferroelectric thin films; SrBi2Ta2O9; SBT; Ti/Pt electrodes; electrode anneals;

D O I：

10.1080/10584589708013016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stress behavior, results of AES analysis and electrical properties of SBT in dependence of electrode structure and annealing conditions are discussed. Evidence for degradation of the electrical properties of SBT due to diffusion of Ti is presented.

引用

页码：421 / 432

页数：12

共 4 条

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[3] In-situ sputter deposition of PT and PZT films on platinum and RuO2 electrodes
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[4] INVESTIGATION OF PT/TI BILAYER METALLIZATION ON SILICON FOR FERROELECTRIC THIN-FILM INTEGRATION
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REANEY, I
MAEDER, T
SETTER, N
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ELLIMAN, RG
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) : 232 - 239

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