Real-time photo-spectroscopic ellipsometry measurement of electric field and composition in semiconductors

被引：3

作者：

Carline, RT

Russell, J

Hosea, TJC

Thomas, PJS

Pickering, C

机构：

[1] Def Evaluat & Res Agcy, Malvern WR14 3PS, Worcs, England

[2] Univ Surrey, Dept Phys, Guildford GU2 5XH, Surrey, England

来源：

THIN SOLID FILMS | 1998年 / 313卷

关键词：

photo-modulation; ellipsometry; field; composition; real-time; FKO;

D O I：

10.1016/S0040-6090(97)00888-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Results presented in this paper demonstrate that photo-modulated spectroscopic ellipsometry (PSE) can provide real-time information on electric field and composition without observation of FKO oscillations. Comparison with PR and PSE at the E-0 critical point (CP) in GaAs shows that electric field information can be obtained from PSE spectra measured at E-1 using simple amplitude considerations. Si1-xGex compositions (0.14 < x < 0.24) evaluated from Lorentzian fits to the E-1 PSE spectra also agree well with those obtained from PR. Reproducible PSE spectra have been obtained from, and simultaneous with. SE spectra in as little as 1 s from both Si and III-V semiconductors. Crown Copyright (C) 1998 Published by Elsevier Science S.A.

引用

页码：579 / 582

页数：4

共 17 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].