CH3NH3PbI3-Based Planar Solar Cells with Magnetron-Sputtered Nickel Oxide

被引:204
作者
Cui, Jin [1 ]
Meng, Fanping [2 ]
Zhang, Hua [1 ]
Cao, Kun [1 ]
Yuan, Huailiang [1 ]
Cheng, Yibing [1 ,3 ]
Huang, Feng [2 ]
Wang, Mingkui [1 ]
机构
[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Michael Gratzel Ctr Mesoscop Solar Cells, Wuhan 430074, Hubei, Peoples R China
[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
[3] Monash Univ, Dept Mat Engn, Melbourne, Vic 3800, Australia
基金
中国国家自然科学基金;
关键词
solar cell; perovskite; NiO blocking layer; magnetron sputtering; solvent engineering; HIGH-EFFICIENCY; TEMPERATURE; LENGTHS; LAYER; FILMS;
D O I
10.1021/am507108u
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Herein we report an investigation of a CH3NH3PbI3 planar solar cell, showing significant power conversion efficiency (PCE) improvement from 4.88% to 6.13% by introducing a homogeneous and uniform NiO blocking interlayer fabricated with the reactive magnetron sputtering method. The sputtered NiO layer exhibits enhanced crystallization, high transmittance, and uniform surface morphology as well as a preferred in-plane orientation of the (200) plane. The PCE of the sputtered-NiO-based perovskite p-i-n planar solar cell can be further promoted to 9.83% when a homogeneous and dense perovskite layer is formed with solvent-engineering technology, showing an impressive open circuit voltage of 1.10 V. This is about 33% higher than that of devices using the conventional spray pyrolysis of NiO onto a transparent conducting glass. These results highlight the importance of a morphology- and crystallization-compatible interlayer toward a high-performance inverted perovskite planar solar cell.
引用
收藏
页码:22862 / 22870
页数:9
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