Invasive nature of corona charging on thermal Si/SiO2 structures with nanometer-thick oxides revealed by electron spin resonance

被引：21

作者：

Stesmans, A ^{[1
]}

Afanas'ev, VV ^{[1
]}

机构：

[1] Univ Louvain, Dept Phys, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 17期

关键词：

D O I：

10.1063/1.1540245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron spin resonance (ESR) analysis reveals that the versatile noncontacting corona biasing method frequently applied in the electrical analysis of Si/SiO2-based structures is not a noninvasive tool, as usually assumed. In the absence of carrier impact damage, at least five types of ESR-active defects are generated, indicating the drastic impact and jeopardizing inference of intrinsic device properties. (C) 2003 American Institute of Physics.

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页码：2835 / 2837

页数：3

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