LiF/Al bilayer source and drain electrodes for n-channel organic field-effect transistors

We investigated electronic effects of an ultrathin LiF interlayer on device properties of copper(11) perfluorophthalocyanine (F16CuPc)-based field effect transistors (FETs) with Al source and drain electrodes. We observed FET operation only for the device with LiF/Al bilayer electrodes. We concluded that an effective electronic contact was formed between Al and F16CuPc layer by the presence of the LiF layer, which prevented the F16CuPc layer from reacting with Al and n-doped with dissociated Li atoms in the vicinity of the source and drain electrodes.