Vertical and lateral mobilities in n-(Ga, Mn)N

Lateral electron mobilities in 0.2-mum-thick n-(Ga, Mn)N films were obtained from Hall measurements, producing values of 116similar to102 cm(2)/V s in the temperature range from 298 to 373 K. These values are comparable to, but slightly lower than, electron mobilities in n-GaN of the same electron concentration. By sharp contrast, analysis of the reverse saturation current in mesa Schottky diodes fabricated in the n-(Ga, Mn)N show vertical electron mobilities of 840similar to336 cm(2)/V s in the temperature range from 298 to 373 K. This is consistent with a reduction in electron scattering by charged dislocations for vertical transport geometries [M. Misra, A. V. Sampath, and T. D. Moustakas, Appl. Phys. Lett. 76, 1045 (2000)]. (C) 2003 American Institute of Physics.