Organosilane-functionalized wide band gap semiconductor surfaces

被引：48

作者：

Petoral, R. M., Jr. ^{[1
]}

Yazdi, G. R. ^{[1
]}

Spetz, A. Lloyd ^{[1
]}

Yakimova, R. ^{[1
]}

Uvdal, K. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 22期

关键词：

D O I：

10.1063/1.2745641

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface functionalization of wide band gap semiconductors, SiC, ZnO, and GaN, with organosilane is reported. Formation of self-assembled monolayers of mercaptopropyltrimethoxysilane is confirmed by x-ray photoelectron spectroscopy and atomic force microscopy. The molecules are adsorbed on the surfaces through the silane groups with the free thiol groups molecularly oriented away from the surface. Moreover, chemisorption via the thiolate is observed for the ZnO surface. Immobilization of a model biomolecule to the functionalized surface is demonstrated. An amino acid derivative, i.e., phosphotyrosine derived thiol, is linked on the functionalized ZnO and GaN surfaces via formation of disulfide bridges. (C) 2007 American Institute of Physics.

引用

页数：3

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