Chemical functionalization of GaN and AlN surfaces

被引:108
作者
Baur, B
Steinhoff, G
Hernando, J
Purrucker, O
Tanaka, M
Nickel, B
Stutzmann, M
Eickhoff, M
机构
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[2] Tech Univ Munich, Phys Dept E22, D-85748 Garching, Germany
[3] Univ Munich, Dept Phys, Munich, Germany
[4] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
关键词
D O I
10.1063/1.2150280
中图分类号
O59 [应用物理学];
学科分类号
摘要
The covalent functionalization of GaN and AlN surfaces with organosilanes is demonstrated. Both octadecyltrimethoxysilane and aminopropyltriethoxysilane form self-assembled monolayers on hydroxylated GaN and AlN surfaces, confirmed by x-ray photoelectron spectroscopy and atomic force microscopy. The monolayer thickness on GaN was determined to 2.5 +/- 0.2 nm by x-ray reflectivity. Temperature-programmed desorption measurements reveal a desorption enthalpy of 240 kJ/mol. The realization of micropatterned self-assembled monolayers and the hybridization of deoxyribonucleic acid molecules on biofunctionalized GaN surfaces are shown.
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页码:1 / 3
页数:3
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