Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons

被引：114

作者：

Cha, Judy J. ^{[1
]}

Williams, James R. ^{[2
]}

Kong, Desheng ^{[1
]}

Meister, Stefan ^{[1
]}

Peng, Hailin ^{[1
]}

Bestwick, Andrew J. ^{[2
]}

Gallagher, Patrick ^{[2
]}

Goldhaber-Gordon, David ^{[2
]}

Cui, Yi ^{[1
]}

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

来源：

NANO LETTERS | 2010年 / 10卷 / 03期

基金：

美国国家科学基金会;

关键词：

Topological insulator; Kondo effect; magnetic doping; nanoribbon; bismuth selenide; HGTE QUANTUM-WELLS; SINGLE DIRAC CONE; TOPOLOGICAL-INSULATOR; NANOWIRES; TRANSPORT; PHASE; SURFACE; SYSTEM; BI2TE3;

D O I：

10.1021/nl100146n

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A simple surface band structure and a large bulk band gap have allowed Bi2SC3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically protected conducting surface states that reside inside the bulk band gap. Studying topological insulators such as Bi2Se3 in nanostructures is advantageous because of the high surface-to-volume ratio, which enhances effects from the surface states recently reported Aharonov-Bohm oscillation in topological insulator nanoribbons by some of us is a good example. Theoretically, introducing magnetic impurities in topological insulators is predicted to open a small gap in the surface states by breaking Lime-reversal symmetry. Here, we present synthesis of magnetically doped Bi2Se3 nanoribbons by vapor-liquid-solid growth using magnetic metal thin films as catalysts. Although the doping concentration is less than similar to 2%, low-temperature transport, measurements of the Fe-doped Bi2Se3 nanoribbon devices show a clear Kondo effect at temperatures below 30 K, confirming the presence of magnetic impurities in the Bi2Se3 nanoribbons. The capability to dope topological insulator nanostructures magnetically opens Up exciting opportunities for spintronics.

引用

页码：1076 / 1081

页数：6

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