Recovery of remanent polarization of poly(vinylidene fluoride-co-trifluoroethylene) thin film after high temperature annealing using topographically nanostructured aluminium bottom electrode

被引:16
作者
Park, Youn Jung
Kang, Seok Ju
Park, Cheolmin [1 ]
Woo, Euntaek
Shin, Kyusoon
Kim, Kap Jin
机构
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[2] Seoul Natl Univ, Sch Chem & Biochem Engn, Seoul 151744, South Korea
[3] Kyung Hee Univ, Coll Environm & Appl Chem, Gyeonggi Do 446701, South Korea
关键词
D O I
10.1063/1.2743389
中图分类号
O59 [应用物理学];
学科分类号
摘要
Facile recovery of ferroelectric polarization after high temperature annealing was observed in a poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) thin film on an etched Al bottom electrode which has a topographically nanostructured surface with hexagonal registry of the recessed hemispherical bowls of approximately 100 nm diameter. Fairly large remanent polarization of 10 mu C/cm(2) was obtained after annealing up to 185 degrees C with the etched Al electrode, while the polarization rapidly dropped near the melting temperature of P(VDF-TrFE) (similar to 150 degrees C) with a flat Al electrode. The topographic electrode is found to facilitate the reorganization of P(VDF-TrFE) crystal under electric field. (C) 2007 American Institute of Physics.
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页数:3
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