Heavy hole doping of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass

被引：96

作者：

Hiramatsu, Hidenori

Ueda, Kazushige

Ohta, Hiromichi

Hirano, Masahiro

Kikuchi, Maiko

Yanagi, Hiroshi

Kamiya, Toshio

Hosono, Hideo

机构：

[1] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Japan sci & Technol Agcy, JST,SORST,ERATO,Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[3] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 01期

关键词：

D O I：

10.1063/1.2753546

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The high density hole doping (1.7x10(21) cm(-3)) for a wide gap (E-g=similar to 2.8 eV) p-type semiconductor was achieved on 40 nm thick Mg-doped LaCuOSe epitaxial films. These films exhibited distinct free carrier absorption, and the effective mass and momentum relaxation time were analyzed. Its small hole mobility [similar to 3.5 cm(2)/(V s)] compared to the electron mobilities of wide gap n-type semiconductors is attributed to a heavy effective mass of 1.6 +/- 0.2m(e). Regardless of the heavy hole doping, a band filling effect was not observed. These results are discussed with a rigid band model and an acceptor band model. (c) 2007 American Institute of Physics.

引用

页数：3

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