Very thin insulating layer formed by low-energy Ar-beam bombardment in the surface region of undoped hydrogenated amorphous silicon

被引：12

作者：

Durny, R

Pincik, E

Nadazdy, V

Jergel, M

Shimizu, J

Kumeda, M

Shimizu, T

机构：

[1] Slovak Univ Technol Bratislava, FEI, Dept Phys, Bratislava 81219, Slovakia

[2] Slovak Acad Sci, Inst Phys, Bratislava 84228, Slovakia

[3] Kanazawa Univ, Fac Engn, Kanazawa, Ishikawa 9208667, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 12期

关键词：

D O I：

10.1063/1.1310634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A very thin insulating layer (VTIL) is formed by low-energy Ar-beam bombardment in the surface region of undoped hydrogenated amorphous silicon (a-Si:H). Several experimental techniques have been utilized to determine the optimal argon beam bombardment conditions to prepare electrically reliable VTIL and to investigate its physical properties (thickness, structure, nature, and density of defects). VTILs prepared under such conditions make the leakage current of a-Si:H based semiconductor structures negligible and allow bias voltages of several volts (up to 5 V). (C) 2000 American Institute of Physics. [S0003-6951(00)01238-9].

引用

页码：1783 / 1785

页数：3

共 5 条

[1] ELECTRON-SPIN RESONANCE IN GLASSES .2. MAGNETIC-PROPERTIES [J].