Giant planar Hall effect in epitaxial (Ga,Mn)As devices

被引：386

作者：

Tang, HX ^{[1
]}

Kawakami, RK

Awschalom, DD

Roukes, ML

机构：

[1] CALTECH, Pasadena, CA 91125 USA

[2] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.90.107201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is 4 orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.

引用

页数：4

共 19 条

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