Band-gap separation in InGaN epilayers grown by metalorganic chemical vapor deposition

被引:14
作者
Chichibu, S
Arita, M
Nakanishi, H
Nishio, J
Sugiura, L
Kokubun, Y
Itaya, K
机构
[1] Sci Univ Tokyo, Fac Sci & Technol, Noda, Chiba 278, Japan
[2] Toshiba Corp, Ctr Res & Dev, Adv Semicond Devices Lab, Saiwai Ku, Kanagawa 210, Japan
关键词
D O I
10.1063/1.367048
中图分类号
O59 [应用物理学];
学科分类号
摘要
Two energetically-separated resonance structures were found in photoreflectance (PR) spectra of three-dimensional InxGa1-xN epilayers (0.05 less than or equal to x less than or equal to-0.2) grown by metalorganic chemical vapor deposition. Energy difference between the two structures was nearly constant about 50 meV for all x examined. The broadening parameter of each structure was nearly independent of x (similar to 50 meV), indicating that each separated region has rather homogeneous net potential fluctuation. The photoluminescence (PL) peak energy agreed with the resonance energy of the lower-energy PR structure? showing nearly zero Stokes-Like shift at room temperature. Observation of a single PL peak indicated that photoexcited carriers were effectively corrected into the separated regions having lower PR resonance energy. (C) 1998 American Institute of Physics.
引用
收藏
页码:2860 / 2862
页数:3
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