共 36 条
[11]
Luminescences from localized states in InGaN epilayers
[J].
APPLIED PHYSICS LETTERS,
1997, 70 (21)
:2822-2824
[14]
Chow WW, 1996, APPL PHYS LETT, V68, P296, DOI 10.1063/1.116064
[15]
CHOW WW, 1994, SEMICONDUCTOR LASER, DOI DOI 10.1007/978-3-642-61225-1
[16]
DEGUCHI T, 1997, UNPUB MAT RES SOC 19
[17]
ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS
[J].
PHYSICAL REVIEW B-SOLID STATE,
1971, 4 (04)
:1211-+
[18]
Haug H., 2009, QUANTUM THEORY OPTIC
[20]
Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional C-face sapphire substrates
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1996, 35 (10B)
:L1315-L1317