Electron spin resonance of doped chalcogenide nanotubes

被引:22
作者
Arcon, D
Zorko, A
Cevc, P
Mrzel, A
Remskar, M
Dominko, R
Gaberscek, M
Mihailovic, D
机构
[1] Jozef Stefan Inst, Ljubljana 1000, Slovenia
[2] Univ Ljubljana, Fac Math & Phys, Ljubljana 1000, Slovenia
[3] Natl Chem Inst, Ljubljana 1000, Slovenia
关键词
D O I
10.1103/PhysRevB.67.125423
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
X-band ESR of lithium doped MoS2 nanotubes is reported for temperatures between room temperature and 4 K. Two distinct ESR components were observed: a narrow component with a linewidth of about 4 G and a broad component with a linewidth of more than 800 G. The broad ESR component is attributed to Mo d-orbital-derived conducting band of MoS2 nanotubes. The large weakly temperature-dependent ESR spin susceptibility of charged MoS2 nanotubes is thought to reflect strong electronic correlations and one-dimensional electronic structure with the presence of van Hove singularities in the density of states. The broad ESR component is discussed in terms of conducting electrons coupled to defects and in terms of random-exchange Mo Heisenberg chain model. The narrow component is suggested to be due to the formation of small spin clusters.
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页数:10
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