Electrical properties and crystal structures of nitrogen-doped Ge2Sb2Te5 thin film for phase change memory

被引：52

作者：

Kim, SM ^{[1
]}

Shin, MJ ^{[1
]}

Choi, DJ ^{[1
]}

Lee, KN ^{[1
]}

Hong, SK ^{[1
]}

Park, YJ ^{[1
]}

机构：

[1] Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea

来源：

THIN SOLID FILMS | 2004年 / 469卷

关键词：

phase change material; nitrogen doping; electrical property; topography;

D O I：

10.1016/j.tsf.2004.08.142

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The characteristics of nitrogen-doped Ge2Sb2Te5 thin films deposited on Si(100) substrates were investigated by X-ray diffraction (XRD) analysis, four-point probe and atomic force microscopy (AFM). It was found that the sheet resistance of the films annealed at 260 and 300 degreesC increased and the face-centered cubic (fcc) peaks of crystalline state of the films gradually disappeared with the increase of N-2 gas flow rate. At the N-2 gas flow rate of 12 seem, however, the sheet resistance of the film remarkably dropped to around that of crystalline state of undoped film and the crystal structure transformed from fcc to hexagonal. The RMS roughness values of the films decreased by the nitrogen doping. However, the surface of the film deposited at the N-2 gas flow rate of 12 seem was very rough due to crystallization of the film into hexagonal when the film was annealed at 260 degreesC for 20 min. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：322 / 326

页数：5

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