Oxygen-related defects in amorphous HfO2 gate dielectrics

被引：36

作者：

Kaneta, C. ^{[1
]}

Yamasaki, T. ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 9-10期

关键词：

oxygen defects; HfO2; amorphous; formation energy;

D O I：

10.1016/j.mee.2007.04.083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Formation energies and electronic properties of oxygen defects in amorphous HfO2 gate dielectrics are investigated by employing the first-principles method based on the density functional theory. We have found that the fori-nation energy of neutral oxygen vacancy in amorphous HfO2 distributes from 4.7 to 6.1 eV, most of which is lower than the value for cubic HfO2, 6.0 eV. The decrease of the formation energy is due to the small coordination number of oxygen atom in the amorphous structure. It is also found that the atomic oxygen incorporation is more favorable in amorphous HfO2 than in crystal HfO2.

引用

页码：2370 / 2373

页数：4

共 10 条

[1] UNIFIED APPROACH FOR MOLECULAR-DYNAMICS AND DENSITY-FUNCTIONAL THEORY [J].