Fine structure of highly charged excitons in semiconductor quantum dots

被引:128
作者
Urbaszek, B [1 ]
Warburton, RJ
Karrai, K
Gerardot, BD
Petroff, PM
Garcia, JM
机构
[1] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland
[2] Univ Munich, Ctr Nanosci, D-80539 Munich, Germany
[3] Univ Munich, Sekt Phys, D-80539 Munich, Germany
[4] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[5] Univ Calif Santa Barbara, QUEST, Santa Barbara, CA 93106 USA
[6] PTM, CNM CSIC Isaac Newton 8, Inst Microelect Madrid, Madrid 28760, Spain
关键词
D O I
10.1103/PhysRevLett.90.247403
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
An exciton in a symmetric semiconductor quantum dot has two possible states, one dark and one bright, split in energy by the electron-hole exchange interaction. We demonstrate that for a doubly charged exciton, there are also two states split by the electron-hole exchange, but both states are now bright. We also uncover a fine structure in the emission from the triply charged exciton. By measuring these splittings, and also those from the singly charged and doubly charged biexcitons, all on the same quantum dot, we show how the various electron-hole exchange energies can be measured without having to break the symmetry of the dot.
引用
收藏
页码:4 / 247403
页数:4
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