Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot -: art. no. 161305

被引：137

作者：

Finley, JJ ^{[1
]}

Fry, PW

Ashmore, AD

Lemaître, A

Tartakovskii, AI

Oulton, R

Mowbray, DJ

Skolnick, MS

Hopkinson, M

Buckle, PD

Maksym, PA

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[3] DERA, Malvern WR14 3PS, Worcs, England

[4] Univ Leicester, Dept Phys & Astron, Leicester LE1 7RH, Leics, England

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.63.161305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of excess electron occupation on the optical properties of excitons (X) and biexcitons (2X) in a single self-assembled InGaAs quantum dot are investigated. The behavior of X and 2X differ strongly as the number of excess electrons is varied with the biexciton being much more weakly perturbed as a result of its filled s-shell ground state, a direct manifestation of shell-filling effects. Good correlation is found between charging thresholds observed from s-shell recombination perturbed by p-shell occupation, and direct observation of p-shall recombination.

引用

页数：4

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