Photoluminescence of charged InAs self-assembled quantum dots

被引：89

作者：

Schmidt, KH ^{[1
]}

Medeiros-Ribeiro, G

Petroff, PM

机构：

[1] Ruhr Univ Bochum, Lehrstuhl Werkstoffe Elektrotech, D-44780 Bochum, Germany

[2] Hewlett Packard Co, Palo Alto, CA 94304 USA

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.58.3597

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have used capacitance and photoluminescence spectroscopy to study the optical properties of charged InAs self-assembled quantum dots. When the dots are loaded with electrons, the ground-state transition in the photoluminescence spectra shows a redshift of about 15 meV accompanied by a decrease in intensity and a broadening. In addition, an excited-state transition appears. All the observations mentioned above are attributed to many-body effects caused by charging of the quantum dots with electrons. The observed changes of the photoluminescence signal are also discussed in terms of field effects.

引用

页码：3597 / 3600

页数：4

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