Room temperature photovoltaic charging in photoemission from diamond

被引：20

作者：

Bandis, C ^{[1
]}

Pate, BB ^{[1
]}

机构：

[1] WASHINGTON STATE UNIV,DEPT PHYS,PULLMAN,WA 99164

来源：

SURFACE SCIENCE | 1996年 / 345卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

diamond; photoelectron spectroscopy; semiconducting surfaces; single crystal surfaces; surface electronic phenomena; surface photovoltage;

D O I：

10.1016/0039-6028(95)00965-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Photovoltaic effects in ultraviolet photoemission spectroscopy of in-situ hydrogenated diamond (111) are evaluated. Significant photovoltaic charging is found at room temperature under typical conditions of band bending for type IIb p-type semiconducting diamond. At low temperature, major shifts in the apparent band bending are observed. These measurements are consistent with predictions of Hecht [M.H. Hecht, J. Vac. Sci. Technol. B 8 (1990) 1018] based on restoring currents limited by carrier transport through the depletion region. Extra care must therefore be taken in analyzing photoelectron spectroscopy measurements to determine the band alignment of diamond surfaces relative to the Fermi level.

引用

页码：L23 / L27

页数：5

共 22 条

[1] SURFACE PHOTOVOLTAGE EFFECTS IN PHOTOEMISSION FROM METAL-GAP(110) INTERFACES - IMPORTANCE FOR BAND-BENDING EVALUATION [J].