Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth

被引：22

作者：

Guina, M ^{[1
]}

Orsila, S

Dumitrescu, M

Saarinen, M

Sipilä, P

Vilokkinen, V

Roycroft, B

Uusimaa, P

Toivonen, M

Pessa, M

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

[2] Deutsch Zentrum Luft & Raumfahrt, Inst Tech Phys, D-70569 Stuttgart, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 07期

关键词：

light emitting diodes; modulation; optical transfer functions; resonant cavity; semiconductor devices;

D O I：

10.1109/68.853500

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

State-of-the-art modulation bandwidths are presented for multiquantum well resonant cavity light emitting diodes (RCLED's) emitting at 650 nm, 84-mu m size epoxy coated RCLED's have a 1.4-mW (CW) output power and a small signal modulation bandwidth of 200 MHz at 10 mA bias. 150-mu m diameter devices yield 3.25-mW and 150-MHz bandwidth at 70-mA bias, An open eye-diagram at 622 Mb/s achieved for the 84-mu m device makes it very attractive for SONET OC-12 data communication links.

引用

页码：786 / 788

页数：3

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