Compensation between magnetoresistance and switching current in Co/Cu/Co spin valve pillar structure

被引:12
作者
Cheng, K. W. [1 ,2 ]
Yu, C. [2 ]
Lin, L. K. [1 ,2 ]
Yao, Y. D. [3 ]
Liou, Y. [2 ]
Huang, J. H. [1 ]
Lee, S. F. [2 ]
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] Acad Sinica, Inst Phys, Taipei 115, Taiwan
[3] Fu Jen Catholic Univ, Inst Appl Sci & Engn, Taipei 242, Taiwan
关键词
cobalt; copper; critical currents; ferromagnetic materials; giant magnetoresistance; magnetic multilayers; magnetic switching; nanomagnetics; spin dynamics; spin polarised transport; spin valves; MAGNETIC MULTILAYERS; EXCITATION;
D O I
10.1063/1.3343059
中图分类号
O59 [应用物理学];
学科分类号
摘要
We examine the effects of modifying the Co hard layer thickness of Co/Cu/Co spin valve submicron pillars with current flowing perpendicular to the plane. The magnetoresistance (MR) ratios and switching currents show complementary behaviors. As the Co hard layer thickness is increased, the MR ratio shows an initial increase with a peak around 21 nm. The critical switching current shows a dip around the same thickness, which is close to the spin diffusion length. The product of the MR ratio and critical current density is about a constant independent of the Co hard layer thickness. Thus, we provide an approach to achieving maximum efficiency (MR ratio) and minimum consumption (critical current) for a practical device.
引用
收藏
页数:3
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