Evidence of two-electron tunneling interference in Nb/InAs junctions

被引：6

作者：

Badolato, A

Giazotto, F

Lazzarino, M

Pingue, P

Beltram, F

Lucheroni, C

Fazio, R

机构：

[1] Scuola Normale Super Pisa, I-56126 Pisa, Italy

[2] Ist Nazl Fis Mat, I-56126 Pisa, Italy

[3] Univ Catania, Dipartimento Metodol Fis & Chim, DMFCI, I-95125 Catania, Italy

[4] Ist Nazl Fis Mat, I-95125 Catania, Italy

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.62.9831

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The impact of junction transparency in driving phase-coherent charge transfer across diffusive semiconductor-superconductor junctions is demonstrated. We present conductivity data for a set of Nb-InAs junctions differing only in interface transparency. Our experimental findings are analyzed within the quasiclassical Green's-function approach and unambiguously show the physical processes giving rise to the observed excess zero-bias conductivity.

引用

收藏

页码：9831 / 9834

页数：4

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