Structural and optical characterisation of undoped Si-Si0.78Ge0.22/Si(001) superlattices grown by MBE

被引：8

作者：

Mironov, OA ^{[1
]}

Phillips, PJ

Parker, EHC

Dowsett, MG

Barradas, NP

Jeynes, C

Mironov, M

Gnezdilov, VP

Ushakov, V

Eremenko, VV

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[2] Univ Surrey, Dept Elect & Elect Engn, Guildford GU2 5XH, Surrey, England

[3] Natl Acad Sci Ukraine, Inst Low Temp Phys & Engn, UA-310164 Kharkov, Ukraine

来源：

THIN SOLID FILMS | 1997年 / 306卷 / 02期

关键词：

Si-Si1-xGex superlattices; characterisation by SIMS; RBS and ellipsometry; Raman scattering in strained-layer heterostructures;

D O I：

10.1016/S0040-6090(97)00240-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the results of structural characterisation of five-period Si-Si1-xGex/Si(001), (x = 0.22) strained-layer superlattices (SL) by SIMS with an ultra-low energy (500 eV) O-2(+) primary beam and by 1.0 MeV He-4(+) RBS together with optical and Raman spectroscopies. The SLs were grown by solid source MBE in a VG Semicon V90S machine at five different substrate temperatures in the range 550 degrees C < T-s < 810 degrees C, which corresponds to the 'equilibrium regime' of Ge segregation near the Si/SiGe interface. The results obtained give information on material and interface quality, layer thicknesses, and state of the strain in the heterostructure. A good agreement is shown between all characterisation methods used. (C) 1997 Elsevier Science S.A.

引用

页码：307 / 312

页数：6

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