Influence of annealing on ZnO films grown by metal-organic chemical vapor deposition

被引：28

作者：

Li, HX

Liu, H ^{[1
]}

Wang, JY

Yao, SS

Cheng, XF

Boughton, RI

机构：

[1] Shandong Univ, State Key Lab Crystal Growth Mat, Jinan 250100, Peoples R China

[2] Bowling Green State Univ, Dept Phys & Astron, Bowling Green, OH 43403 USA

来源：

MATERIALS LETTERS | 2004年 / 58卷 / 27-28期

关键词：

atomic force microscopy; chemical vapor deposition; surfaces; heat treatment;

D O I：

10.1016/j.matlet.2004.07.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Zinc oxide (ZnO) films were deposited on silica glass substrates using metal-organic chemical vapor deposition (MOCVD) with diethyl zinc (DEZn) as the Zn precursor and ethanol as the oxygen source. Annealing was performed at 600 degreesC for 1 h in air. The X-ray diffraction (XRD) patterns of the samples show sharp diffraction peaks for ZnO (0002), which indicates that the films are highly c-axis oriented. The films were also characterized by measuring the optical transmission spectrum, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The XPS spectra showed that the ZnO films changed from O-rich to Zn-rich after being annealed. (C) 2004 Elsevier B.V. All rights reserved.

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页码：3630 / 3633

页数：4

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