Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD

被引：28

作者：

Du, GT

Wang, JZ ^{[1
]}

Wang, XQ

Jiang, XY

Yang, SR

Ma, Y

Yan, W

Gao, DS

Liu, X

Cao, H

Xu, JY

Chang, RPH

机构：

[1] Jilin Univ, Key Lab Integrated Optoelect, Dept Elect Engn, Changchun 130023, Peoples R China

[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

来源：

VACUUM | 2003年 / 69卷 / 04期

基金：

中国国家自然科学基金;

关键词：

plasma-assisted MOCVD; XRD; PL; optical transmission;

D O I：

10.1016/S0042-207X(02)00538-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO films were grown on C-plane sapphire substrate by plasma-assisted MOCVD, The films was characterized by XRD, photoluminescence (PL) and the optical transmission spectrum. We found tensile strain in the sample, which had been annealed many times during the growth process, while there is compressive strain in the sample, which was annealed only one time after growth. The PL spectra at room temperature for the sample annealed many times exhibited only one emitting peak at around 380nm. However, we find r(5) and r(6) free exciton peaks in the sample annealed only one time after growth. At the same time, the optical transmission indicate that the maximum of the sample's transmission decreases against with the increasing of the c-axis length in ranges from 190 to 900 nm. (C) 2003 Elsevier Science Ltd. All rights reserved.

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页码：473 / 476

页数：4

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