Transients during pre-breakdown and hard breakdown of thin gate oxides in metal-SiO2-Si capacitors

被引：3

作者：

Lombardo, S

Crupi, F

Spinella, C

Neri, B

机构：

[1] CNR, Ist Nazl Metodol & Tecnol Microelettron, I-95121 Catania, Italy

[2] Univ Pisa, Dipartimento Ingn Informaz Elettr Informat Teleco, I-56126 Pisa, Italy

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 1999年 / 2卷 / 04期

关键词：

D O I：

10.1016/S1369-8001(99)00040-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Time-resolved electrical measurements show transient phenomena occurring during degradation and intrinsic dielectric breakdown of gate oxide layers under constant voltage Fowler-Nordheim stress. We have studied such transients in metal/oxide/semiconductor (MOS) capacitors with an n(+) poly-crystalline Si/SiO2/n-type Si stack and with oxide thickness between 35 and 5.6 nm. The data adds new information concerning the intrinsic breakdown mechanism and these are shown and discussed together with the adopted measurement techniques. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：359 / 367

页数：9

共 22 条

[1]

APTE PP, 1994, P IRPS, P136

[2] A MODEL FOR SILICON-OXIDE BREAKDOWN UNDER HIGH-FIELD AND CURRENT STRESS [J].