A MODEL FOR SILICON-OXIDE BREAKDOWN UNDER HIGH-FIELD AND CURRENT STRESS

[1] TEMPERATURE EFFECTS ON ELECTRON TRAP GENERATION AND OCCUPATION IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2700 - 2703

[2] OXIDE TRAPPING UNDER SPATIALLY-VARIABLE OXIDE ELECTRIC-FIELD IN THE METAL-OXIDE-SILICON STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1987, 51 (06) : 463 - 465

[3] TRAP GENERATION AND OCCUPATION IN STRESSED GATE OXIDES UNDER SPATIALLY-VARIABLE OXIDE ELECTRIC-FIELD [J]. APPLIED PHYSICS LETTERS, 1987, 51 (22) : 1857 - 1859

[4] THE EFFECT OF GATE MATERIAL ON OXIDE DEGRADATION DUE TO CHARGE-INJECTION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J]. SOLID-STATE ELECTRONICS, 1988, 31 (02) : 245 - 250

[5] EFFECTS OF TEMPERATURE ANNEALING ON CHARGE-INJECTION-INDUCED TRAPPING IN GATE OXIDES OF METAL-OXIDE-SILICON TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1563 - 1568

[6] AVNI E, 1988, J APPL PHYS, V63, P734

[7] BALK P, 1983, C SER I PHYSICS, V69, P63

[8] ON THE MECHANISM OF DIELECTRIC-BREAKDOWN OF SOLIDS [J]. IEEE TRANSACTIONS ON ELECTRICAL INSULATION, 1980, 15 (03): : 225 - 240

[9] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 164 - 167

[10] CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957

[1] TEMPERATURE EFFECTS ON ELECTRON TRAP GENERATION AND OCCUPATION IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2700 - 2703

[2] OXIDE TRAPPING UNDER SPATIALLY-VARIABLE OXIDE ELECTRIC-FIELD IN THE METAL-OXIDE-SILICON STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1987, 51 (06) : 463 - 465

[3] TRAP GENERATION AND OCCUPATION IN STRESSED GATE OXIDES UNDER SPATIALLY-VARIABLE OXIDE ELECTRIC-FIELD [J]. APPLIED PHYSICS LETTERS, 1987, 51 (22) : 1857 - 1859

[4] THE EFFECT OF GATE MATERIAL ON OXIDE DEGRADATION DUE TO CHARGE-INJECTION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J]. SOLID-STATE ELECTRONICS, 1988, 31 (02) : 245 - 250

[5] EFFECTS OF TEMPERATURE ANNEALING ON CHARGE-INJECTION-INDUCED TRAPPING IN GATE OXIDES OF METAL-OXIDE-SILICON TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1563 - 1568

[6] AVNI E, 1988, J APPL PHYS, V63, P734

[7] BALK P, 1983, C SER I PHYSICS, V69, P63

[8] ON THE MECHANISM OF DIELECTRIC-BREAKDOWN OF SOLIDS [J]. IEEE TRANSACTIONS ON ELECTRICAL INSULATION, 1980, 15 (03): : 225 - 240

[9] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 164 - 167

[10] CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957