Demonstration of unpinned GaAs surface and surface inversion with gate dielectric made of Si3N4

被引：12

作者：

Li, W. P. ^{[1
]}

Wang, X. W. ^{[1
]}

Liu, Y. X. ^{[1
]}

Shim, S. I. ^{[1
]}

Ma, T. P. ^{[1
]}

机构：

[1] Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 19期

关键词：

D O I：

10.1063/1.2737374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have measured the electrical properties of metal insulator semiconductor capacitors of GaAs, with ex situ jet-vapor-deposited Si3N4 as a gate dielectric. Unpinning of GaAs surface was demonstrated by ac conductance and capacitance-voltage (C-V) measurement; GaAs surface inversion has been demonstrated by quasistatic C-V and hysteresis C-V measurements. Hydrogen plasma predeposition treatment at 200 degrees C has been shown to reduce interface-state density. The lowest interface-state density that the authors measured was 9x10(11)/cm(2)/eV at 0.57 eV above E-V for p-type GaAs, and the smallest hysteresis window was 100 mV. (C) 2007 American Institute of Physics.

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页数：3

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