Formation of magnetite in bismuth ferrrite under voltage stressing

被引：29

作者：

Lou, X. J. ^{[1
]}

Yang, C. X.

Tang, T. A.

Lin, Y. Y.

Zhang, M.

Scott, J. F.

机构：

[1] Univ Cambridge, Dept Earth Sci, Ctr Ferro, Cambridge CB2 3EQ, England

[2] Fudan Univ, Dept Microelect, Asic&Syst State Key Lab, Shanghai, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 26期

关键词：

D O I：

10.1063/1.2752724

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Micro-Raman studies show that under similar to 700 kV/cm of dc voltage stressing for a few seconds, magnetite Fe3O4 forms in thin-film bismuth ferrite BiFeO3, probably due to phase separation. No evidence is found spectroscopically of hemite alpha-Fe2O3, maghemite gamma-Fe2O3, or Bi2O3. This may relate to the controversy regarding the magnitude of magnetization in BiFeO3. (c) 2007 American Institute of Physics.

引用

页数：3

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