Optimization of DUV chemically amplified resist platforms for SCALPEL E-beam exposure

被引：5

作者：

Ocola, LE ^{[1
]}

Blakey, MI ^{[1
]}

Orphanos, PA ^{[1
]}

Li, WY ^{[1
]}

Novembre, AE ^{[1
]}

Brainard, RL ^{[1
]}

Mackevich, JF ^{[1
]}

Taylor, GN ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES IV | 2000年 / 3997卷

关键词：

SCALPEL; resists; chemically amplified; Monte Carlo; simulation; DUV;

D O I：

10.1117/12.390055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optimization of phenolic chemically amplified resist platforms has lead to the development of new resists, capable of high throughput SCALPEL exposure. A positive resist, XP9947A, has exhibited 100 nm and 80 nm dense line resolution with good sensitivity and dose latitude. The influence of DUV absorption and 100 KV e-beam absorption to the optimization process is discussed. The nature of 100 KV e-beam absorption enables a greater freedom of resist design than encountered for DW resists.

引用

页码：194 / 203

页数：10

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